MOSFET N-CHANNEL 30V 10A 8SOP
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 12mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1550 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOP |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
2SK1167-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
RJK0301DPB-00#J0Rochester Electronics |
MOSFET N-CH 30V 60A LFPAK |
|
AOK42S60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 39A TO247 |
|
NX3008NBKMB,315Nexperia |
MOSFET N-CH 30V 530MA DFN1006B-3 |
|
IRF8113PBFRochester Electronics |
HEXFET POWER MOSFET |
|
FQI15P12TURochester Electronics |
MOSFET P-CH 120V 15A I2PAK |
|
UJ3C065080B3UnitedSiC |
MOSFET N-CH 650V 25A TO263 |
|
AOT600A60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 8A TO220 |
|
UPA1820GR-9JG-E1-ARochester Electronics |
MOSFET N-CH 20V 12A 8TSSOP |
|
5LP01SP-ACRochester Electronics |
MOSFET P-CH 50V 70MA 3SPA |
|
IRL40B215IR (Infineon Technologies) |
MOSFET N-CH 40V 120A TO220AB |
|
SQA470EJ-T1_GE3Vishay / Siliconix |
MOSFET N-CH 30V 2.25A PPAK SC70 |
|
APT6011B2VRGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 49A T-MAX |