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IPW65R115CFD7AXKSA1

IPW65R115CFD7AXKSA1

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IPW65R115CFD7AXKSA1

IPW65R115CFD7AXKSA1

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Part No :

IPW65R115CFD7AXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 21A TO247-3-41
Catalog
Transistors - FETs, MOSFETs - Single
Availability
957195 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
Type Description
Series:Automotive, AEC-Q101, CoolMOS™ CFD7A
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:115mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id:4.5V @ 490µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1950 pF @ 400 V
FET Feature:-
Power Dissipation (Max):114W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-41
Package / Case:TO-247-3
IPW65R115CFD7AXKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPW65R115CFD7AXKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPW65R115CFD7AXKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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