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SIA445EDJT-T1-GE3

SIA445EDJT-T1-GE3

MOSFET P-CH 20V 12A PPAK SC70-6

SIA445EDJT-T1-GE3

SIA445EDJT-T1-GE3

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Part No :

SIA445EDJT-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 20V 12A PPAK SC70-6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
997199 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
SIA445EDJT-T1-GE3 PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:16.7mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:69 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:2180 pF @ 10 V
FET Feature:-
Power Dissipation (Max):19W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SC-70-6 Single
Package / Case:PowerPAK® SC-70-6
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