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FQPF7N80C

FQPF7N80C

MOSFET N-CH 800V 6.6A TO220F

AE105E23B35AA

AE105E23B35AA

CONN RCPT MALE 100POS CRIMP

6057154-1

6057154-1

3004 7841 00

FQPF7N80C

FQPF7N80C

Image is for reference, please contact us to get the real picture

Part No :

FQPF7N80C

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 800V 6.6A TO220F
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10865 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 25 - Sep 29 2024
PDF
FQPF7N80C PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.9Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1680 pF @ 25 V
FET Feature:-
Power Dissipation (Max):56W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Package / Case:TO-220-3 Full Pack
FQPF7N80C is available at GangBo-ic.com, Please review product page below for detailed information, including FQPF7N80C price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQPF7N80C to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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