N-CHANNEL 100 V (D-S) MOSFET POW
Type | Description |
---|---|
Series: | TrenchFET® Gen V |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 31A (Ta), 126A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 7.5V, 10V |
Rds On (Max) @ Id, Vgs: | 3.6mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 81 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4980 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 6.25W (Ta), 104W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerPAK® SO-8 |
Package / Case: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
NTMFS4931NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 23A/246A 5DFN |
![]() |
IPA60R950C6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 4.4A TO220-FP |
![]() |
FQB19N20LTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 21A D2PAK |
![]() |
FDW264PRochester Electronics |
MOSFET P-CH 20V 9.7A 8TSSOP |
![]() |
RQ5A040ZPTLROHM Semiconductor |
MOSFET P-CH 12V 4A TSMT3 |
![]() |
HUF76009P3Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
SCH1334-TL-HRochester Electronics |
MOSFET P-CH 12V 1.6A 6SCH |
![]() |
AOD444Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 4A/12A TO252 |
![]() |
SI4838BDY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 12V 34A 8SO |
![]() |
DMTH4005SCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 100A TO220AB |
![]() |
PXN6R2-25QLJNexperia |
PXN6R2-25QL/SOT8002/MLPAK33 |
![]() |
STF12NK60ZSTMicroelectronics |
MOSFET N-CH 600V 10A TO220FP |
![]() |
PML260SN,118Rochester Electronics |
MOSFET N-CH 200V 8.8A DFN3333-8 |