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FQB19N20LTM

FQB19N20LTM

MOSFET N-CH 200V 21A D2PAK

FQB19N20LTM

FQB19N20LTM

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Part No :

FQB19N20LTM

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 200V 21A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10120 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 24 - Sep 28 2024
PDF
FQB19N20LTM PDF
Type Description
Series:QFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:140mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2200 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 140W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQB19N20LTM is available at GangBo-ic.com, Please review product page below for detailed information, including FQB19N20LTM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQB19N20LTM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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