RES 2.37M OHM 1/4W .5% AXIAL
HEATSINK 35X35X25MM R-TAB
N-CHANNEL POWER MOSFET
Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AUIRLR014NTRLRochester Electronics |
AUTOMOTIVE POWER MOSFET |
|
MTB3N60ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXTP50N25TWickmann / Littelfuse |
MOSFET N-CH 250V 50A TO220AB |
|
SQD100N04-3M6_GE3Vishay / Siliconix |
MOSFET N-CH 40V 100A TO252AA |
|
AO3403Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 2.6A SOT23-3L |
|
BUK7528-100A,127Rochester Electronics |
PFET, 47A I(D), 100V, 0.028OHM, |
|
TK3A65DA(STA4,QM)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 2.5A TO220SIS |
|
BSZ058N03MSGRochester Electronics |
BSZ058N03 - 12V-300V N-CHANNEL P |
|
IXTA02N250HVWickmann / Littelfuse |
MOSFET N-CH 2500V 200MA TO263AB |
|
SUD20N10-66L-BE3Vishay / Siliconix |
MOSFET N-CH 100V 16.9A DPAK |
|
IRFU014PBFVishay / Siliconix |
MOSFET N-CH 60V 7.7A TO251AA |
|
NTTS2P03R2Rochester Electronics |
MOSFET P-CH 30V 2.1A MICRO8 |
|
CPC3980ZTRWickmann / Littelfuse |
MOSFET N-CH 800V SOT223 |