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NTB65N02RT4G

NTB65N02RT4G

MOSFET N-CH 25V 7.6A D2PAK

NTB65N02RT4G

NTB65N02RT4G

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Part No :

NTB65N02RT4G

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 25V 7.6A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
NTB65N02RT4G PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.5 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.33 pF @ 20 V
FET Feature:-
Power Dissipation (Max):1.04W (Ta), 62.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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