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RF4E100AJTCR

RF4E100AJTCR

MOSFET N-CH 30V 10A HUML2020L8

RF4E100AJTCR

RF4E100AJTCR

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Part No :

RF4E100AJTCR

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 30V 10A HUML2020L8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13002 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
RF4E100AJTCR PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V
Rds On (Max) @ Id, Vgs:12.4mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:1460 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:HUML2020L8
Package / Case:8-PowerUDFN
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