TRANS SJT N-CH 650V 70A TO263-7
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 39mOhm @ 27A, 18V |
Vgs(th) (Max) @ Id: | 5.6V @ 13.3mA |
Gate Charge (Qg) (Max) @ Vgs: | 104 nC @ 18 V |
Vgs (Max): | +22V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: | 1526 pF @ 500 V |
FET Feature: | - |
Power Dissipation (Max): | 267W |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263-7 |
Package / Case: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BSL202SNH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 20V 7.5A TSOP-6 |
|
NVMFS5826NLT1GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 6 |
|
VN2222LL-GRoving Networks / Microchip Technology |
MOSFET N-CH 60V 230MA TO92-3 |
|
BSS84PH6433XTMA1IR (Infineon Technologies) |
MOSFET P-CH 60V 170MA SOT23-3 |
|
IRF830ASPBFVishay / Siliconix |
MOSFET N-CH 500V 5A D2PAK |
|
BSS138NH6327XTSA2IR (Infineon Technologies) |
MOSFET N-CH 60V 230MA SOT23-3 |
|
APT23F60BRoving Networks / Microchip Technology |
MOSFET N-CH 600V 24A TO247 |
|
MTB60N10E7LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
BSC050N03MSGATMA1Rochester Electronics |
PFET, 16A I(D), 30V, 0.0063OHM, |
|
IRFR3303TRPBFRochester Electronics |
HEXFET N-CHANNEL POWER MOSFET |
|
CSD23381F4Texas Instruments |
MOSFET P-CH 12V 2.3A 3PICOSTAR |
|
SIHW30N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 29A TO247AD |
|
IRF6810STRPBFRochester Electronics |
PFET, 16A I(D), 25V, 0.0052OHM, |