MOSFET N-CH 250V 1.5A/5A 8DFN
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 250 V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A (Ta), 5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 560mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: | 4.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 7.2 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 370 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 3.1W (Ta), 33W (Tc) |
Operating Temperature: | -50°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-DFN (3x3) |
Package / Case: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AON6156Alpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 45V 100A 8DFN |
|
NTMFS4H01NT1GRochester Electronics |
MOSFET N-CH 25V 54A/334A 5DFN |
|
FQP4N20Rochester Electronics |
MOSFET N-CH 200V 3.6A TO220-3 |
|
FQP4N90Rochester Electronics |
MOSFET N-CH 900V 4.2A TO220-3 |
|
SI2305B-TPMicro Commercial Components (MCC) |
MOSFET P-CH 20V 4.2A SOT23 |
|
IXTP08N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 800MA TO220AB |
|
APT8020LFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 800V 38A TO264 |
|
IRLZ24LPBFVishay / Siliconix |
MOSFET N-CH 60V 17A TO262-3 |
|
IRFB4410ZPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 97A TO220AB |
|
SIRA58ADP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 40V 32.3A/109A PPAK |
|
TK31V60W5,LVQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 30.8A 4DFN |
|
IPD50R800CEATMA1Rochester Electronics |
MOSFET N-CH 500V 5A TO252-3 |
|
5LN01SS-TL-HRochester Electronics |
MOSFET N-CH 50V 100MA 3SSFP |