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FQP4N90

FQP4N90

MOSFET N-CH 900V 4.2A TO220-3

FS3X1WH6NM

FS3X1WH6NM

WIRE DUCT SOLID BASE WHITE 6'

FQP4N90

FQP4N90

Image is for reference, please contact us to get the real picture

Part No :

FQP4N90

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 900V 4.2A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12156 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2024
PDF
FQP4N90 PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.3Ohm @ 2.1A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1.1 pF @ 25 V
FET Feature:-
Power Dissipation (Max):140W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
FQP4N90 is available at GangBo-ic.com, Please review product page below for detailed information, including FQP4N90 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQP4N90 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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