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3LN01C-TB-H

3LN01C-TB-H

MOSFET N-CH 30V 150MA 3CP

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3LN01C-TB-H

3LN01C-TB-H

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Part No :

3LN01C-TB-H

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 30V 150MA 3CP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
45131 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 25 - Oct 29 2025
PDF
3LN01C-TB-H PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4V
Rds On (Max) @ Id, Vgs:3.7Ohm @ 80mA, 4V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:1.58 nC @ 10 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:7 pF @ 10 V
FET Feature:-
Power Dissipation (Max):250mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-CP
Package / Case:TO-236-3, SC-59, SOT-23-3
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