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RS1E200GNTB

RS1E200GNTB

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Part No :

RS1E200GNTB

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 30V 20A 8HSOP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12230 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 26 - Oct 30 2025
PDF
RS1E200GNTB PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:16.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1080 pF @ 15 V
FET Feature:-
Power Dissipation (Max):3W (Ta), 25.1W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HSOP
Package / Case:8-PowerTDFN
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