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FQP18N50V2

FQP18N50V2

MOSFET N-CH 500V 18A TO220-3

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FQP18N50V2

FQP18N50V2

Image is for reference, please contact us to get the real picture

Part No :

FQP18N50V2

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 500V 18A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10590 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
FQP18N50V2 PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:265mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3.29 pF @ 25 V
FET Feature:-
Power Dissipation (Max):208W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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