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IPB65R190C6ATMA1

IPB65R190C6ATMA1

MOSFET N-CH 650V 20.2A D2PAK

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IPB65R190C6ATMA1

IPB65R190C6ATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPB65R190C6ATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 650V 20.2A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13800 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 26 - Mar 02 2025
PDF
IPB65R190C6ATMA1 PDF
Type Description
Series:CoolMOS™
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id:3.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs:73 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.62 pF @ 100 V
FET Feature:-
Power Dissipation (Max):151W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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