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SIA817EDJ-T1-GE3

SIA817EDJ-T1-GE3

MOSFET P-CH 30V 4.5A PPAK SC70-6

SIA817EDJ-T1-GE3

SIA817EDJ-T1-GE3

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Part No :

SIA817EDJ-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 30V 4.5A PPAK SC70-6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
20067 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 25 - Jan 29 2025
PDF
SIA817EDJ-T1-GE3 PDF
Type Description
Series:LITTLE FOOT®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:65mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:600 pF @ 15 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):1.9W (Ta), 6.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SC-70-6 Dual
Package / Case:PowerPAK® SC-70-6 Dual
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