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NTD3808N-1G

NTD3808N-1G

MOSFET N-CH 16V 12A/76A IPAK

NTD3808N-1G

NTD3808N-1G

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Part No :

NTD3808N-1G

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 16V 12A/76A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
17275 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
NTD3808N-1G PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):16 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 4.5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:1.66 pF @ 12 V
FET Feature:-
Power Dissipation (Max):1.3W (Ta), 52W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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