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416F2601XASR

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CRYSTAL 26.0000MHZ SERIES SMD

SISH106DN-T1-GE3

SISH106DN-T1-GE3

MOSFET N-CH 20V 12.5A PPAK

SISH106DN-T1-GE3

SISH106DN-T1-GE3

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Part No :

SISH106DN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 20V 12.5A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15638 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
SISH106DN-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:12.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:6.2mOhm @ 19.5A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8SH
Package / Case:PowerPAK® 1212-8SH
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