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FCP11N60

FCP11N60

MOSFET N-CH 600V 11A TO220-3

FCP11N60

FCP11N60

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Part No :

FCP11N60

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 600V 11A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
7451000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
FCP11N60 PDF
Type Description
Series:SuperFET™
Package:Tube
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1490 pF @ 25 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
FCP11N60 is available at GangBo-ic.com, Please review product page below for detailed information, including FCP11N60 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FCP11N60 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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