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SIHU4N80AE-GE3

SIHU4N80AE-GE3

MOSFET N-CH 800V 4.3A IPAK

IDT71V67602S133BQ

IDT71V67602S133BQ

IC SRAM 9MBIT PARALLEL 165CABGA

SIHU4N80AE-GE3

SIHU4N80AE-GE3

Image is for reference, please contact us to get the real picture

Part No :

SIHU4N80AE-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 800V 4.3A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 28 - Aug 01 2025
Type Description
Series:E
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.27Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:622 pF @ 100 V
FET Feature:-
Power Dissipation (Max):69W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:IPAK (TO-251)
Package / Case:TO-251-3 Long Leads, IPak, TO-251AB
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