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IPA100N08N3GXKSA1

IPA100N08N3GXKSA1

MOSFET N-CH 80V 40A TO220-3-111

IPA100N08N3GXKSA1

IPA100N08N3GXKSA1

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Part No :

IPA100N08N3GXKSA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 80V 40A TO220-3-111
Catalog
Transistors - FETs, MOSFETs - Single
Availability
606460 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 24 - Jan 28 2025
PDF
IPA100N08N3GXKSA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:10mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2410 pF @ 40 V
FET Feature:-
Power Dissipation (Max):35W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-111
Package / Case:TO-220-3 Full Pack
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