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IRFH5110TRPBF

IRFH5110TRPBF

MOSFET N-CH 100V 11A/63A 8PQFN

IRFH5110TRPBF

IRFH5110TRPBF

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Part No :

IRFH5110TRPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 11A/63A 8PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14488 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 22 - Feb 26 2025
PDF
IRFH5110TRPBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:12.4mOhm @ 37A, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:72 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3152 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.6W (Ta), 114W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerVDFN
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