MOSFET P-CH 20V 2.2A 6TSOP
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 2.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 65mOhm @ 4.4A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 15 nC @ 4.5 V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 565 pF @ 5 V |
FET Feature: | - |
Power Dissipation (Max): | 500mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-TSOP |
Package / Case: | SOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
FDB031N08Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 75V 120A D2PAK |
![]() |
IRFR310BTFRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
XP161A11A1PR-GTorex Semiconductor Ltd. |
MOSFET N-CH 30V 4A SOT89 |
![]() |
IPD50N03S4L06ATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 50A TO252-31 |
![]() |
FDS7088N3Rochester Electronics |
MOSFET N-CH 30V 21A 8SO |
![]() |
IRF9520STRRPBFVishay / Siliconix |
MOSFET P-CH 100V 6.8A D2PAK |
![]() |
PSMN2R8-40BS,118Rochester Electronics |
MOSFET N-CH 40V 100A D2PAK |
![]() |
NVMFS5C423NLAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 31A/150A 5DFN |
![]() |
FDS9435ASanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 5.3A 8SOIC |
![]() |
RJK60S7DPP-E0#T2Rochester Electronics |
N-CHANNEL MOSFET |
![]() |
SIR158DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8 |
![]() |
DMN2112SN-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 1.2A SC59-3 |
![]() |
2SK3711Sanken Electric Co., Ltd. |
MOSFET N-CH 60V 70A TO3P |