MOSFET N-CH 500V 20A TO268
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500 V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 330mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 250mA |
Gate Charge (Qg) (Max) @ Vgs: | 125 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 2500 pF @ 25 V |
FET Feature: | Depletion Mode |
Power Dissipation (Max): | 400W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
PSMN9R5-100PS,127Nexperia |
MOSFET N-CH 100V 89A TO220AB |
|
TK50P03M1(T6RSS-Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 50A DP |
|
NVMFS5C682NLWFAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 8.8A/25A 5DFN |
|
SIHG14N50D-GE3Vishay / Siliconix |
MOSFET N-CH 500V 14A TO247AC |
|
IAUZ40N08S5N100ATMA1IR (Infineon Technologies) |
MOSFET N-CH 75V 80A 8TSDSON |
|
SI1308EDL-T1-BE3Vishay / Siliconix |
MOSFET N-CH 30V 1.5A/1.4A SC70-3 |
|
IRFL4315PBFRochester Electronics |
HEXFET POWER MOSFET |
|
DMT6013LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 10A 8SO |
|
SIHP22N60E-E3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO220AB |
|
FDP13AN06A0_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPP50R280CEXKSA1IR (Infineon Technologies) |
MOSFET N-CH 500V 13A TO220-3 |
|
AUIRFS6535TRLRochester Electronics |
MOSFET N-CH 300V 19A D2PAK |
|
TK110A65Z,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 24A TO220SIS |