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IPA180N10N3GXKSA1

IPA180N10N3GXKSA1

28A, 100V, 0.018OHM, N-CHANNEL,

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IPA180N10N3GXKSA1

IPA180N10N3GXKSA1

Image is for reference, please contact us to get the real picture

Part No :

IPA180N10N3GXKSA1

Manufacturer
Rochester Electronics
Description
28A, 100V, 0.018OHM, N-CHANNEL,
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11839 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
IPA180N10N3GXKSA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:18mOhm @ 28A, 10V
Vgs(th) (Max) @ Id:3.5V @ 35µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.8 pF @ 50 V
FET Feature:-
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-FP
Package / Case:TO-220-3 Full Pack
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