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SISS61DN-T1-GE3

SISS61DN-T1-GE3

MOSFET P-CH 20V 30.9/111.9A PPAK

SISS61DN-T1-GE3

SISS61DN-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SISS61DN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 20V 30.9/111.9A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
306030 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
Type Description
Series:TrenchFET® Gen III
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:30.9A (Ta), 111.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:3.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:231 nC @ 10 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:8740 pF @ 10 V
FET Feature:-
Power Dissipation (Max):5W (Ta), 65.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8S
Package / Case:PowerPAK® 1212-8S
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