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SIHG11N80E-GE3

SIHG11N80E-GE3

MOSFET N-CH 800V 12A TO247AC

SIHG11N80E-GE3

SIHG11N80E-GE3

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Part No :

SIHG11N80E-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 800V 12A TO247AC
Catalog
Transistors - FETs, MOSFETs - Single
Availability
655765 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 18 - Nov 22 2024
PDF
SIHG11N80E-GE3 PDF
Type Description
Series:E
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:440mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:88 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1670 pF @ 100 V
FET Feature:-
Power Dissipation (Max):179W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AC
Package / Case:TO-247-3
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