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IPA60R180P7XKSA1

IPA60R180P7XKSA1

MOSFET N-CHANNEL 650V 18A TO220

FFSD-10-D-09.70-01-N-D07

FFSD-10-D-09.70-01-N-D07

.050 X .050 C.L. FEMALE IDC ASSE

IPA60R180P7XKSA1

IPA60R180P7XKSA1

Image is for reference, please contact us to get the real picture

Part No :

IPA60R180P7XKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CHANNEL 650V 18A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10570 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 22 - Feb 26 2025
PDF
IPA60R180P7XKSA1 PDF
Type Description
Series:CoolMOS™ P7
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id:4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1081 pF @ 400 V
FET Feature:-
Power Dissipation (Max):26W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220 Full Pack
Package / Case:TO-220-3 Full Pack
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