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SI2319CDS-T1-GE3

SI2319CDS-T1-GE3

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Part No :

SI2319CDS-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 40V 4.4A SOT23-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
675667 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
SI2319CDS-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:77mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:595 pF @ 20 V
FET Feature:-
Power Dissipation (Max):1.25W (Ta), 2.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
SI2319CDS-T1-GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SI2319CDS-T1-GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SI2319CDS-T1-GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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