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SCT10N120H

SCT10N120H

SICFET N-CH 1200V 12A H2PAK-2

HVDA553QDRQ1

HVDA553QDRQ1

IC TRANSCEIVER HALF 1/2 8SOIC

SCT10N120H

SCT10N120H

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Part No :

SCT10N120H

Manufacturer
STMicroelectronics
Description
SICFET N-CH 1200V 12A H2PAK-2
Catalog
Transistors - FETs, MOSFETs - Single
Availability
705670 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 16 - Jun 20 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:690mOhm @ 6A, 20V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 20 V
Vgs (Max):+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:290 pF @ 400 V
FET Feature:-
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2Pak-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SCT10N120H is available at GangBo-ic.com, Please review product page below for detailed information, including SCT10N120H price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SCT10N120H to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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