MOSFET N-CH 300V 120A TO247
Type | Description |
---|---|
Series: | HiPerFET™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 300 V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 11mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: | 170 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 10.5 nF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 735W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPP65R660CFDRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXFA26N30X3Wickmann / Littelfuse |
MOSFET N-CH 300V 26A TO263AA |
|
NVD6820NLT4G-VF01Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 90V 10A/50A DPAK |
|
DMP1096UCB4-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 2.6A U-WLB1010-4 |
|
STD4N80K5STMicroelectronics |
MOSFET N-CH 800V 3A DPAK |
|
FDA70N20Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 70A TO3PN |
|
SSM3J134TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 3.2A UFM |
|
IPS70R360P7SAKMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 12.5A TO251-3 |
|
SPB100N03S203TIR (Infineon Technologies) |
MOSFET N-CH 30V 100A TO263-3 |
|
IXFP30N60XWickmann / Littelfuse |
MOSFET N-CH 600V 30A TO220 |
|
IPT60R022S7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 23A 8HSOF |
|
R5009ANXROHM Semiconductor |
MOSFET N-CH 500V 9A TO220 |
|
IRFS7787TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 76A D2PAK |