MOSFET N-CH 700V 12.5A TO251-3
DIODE GEN PURP 180V 200MA DO213
IC SRAM 8KBIT PARALLEL 52PLCC
CASS, 62.5, 6P, MPO STD-MT-RJ
Type | Description |
---|---|
Series: | CoolMOS™ P7 |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 700 V |
Current - Continuous Drain (Id) @ 25°C: | 12.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 360mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: | 16.4 nC @ 10 V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 517 pF @ 400 V |
FET Feature: | - |
Power Dissipation (Max): | 59.5W (Tc) |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO251-3 |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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