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IPD70N03S4L04ATMA1

IPD70N03S4L04ATMA1

MOSFET N-CH 30V 70A TO252-3

IPD70N03S4L04ATMA1

IPD70N03S4L04ATMA1

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Part No :

IPD70N03S4L04ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 30V 70A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
195619 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
IPD70N03S4L04ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.3mOhm @ 70A, 10V
Vgs(th) (Max) @ Id:2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs:48 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:3300 pF @ 25 V
FET Feature:-
Power Dissipation (Max):68W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD70N03S4L04ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD70N03S4L04ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD70N03S4L04ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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