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LTC4364HMS-2#TRPBF

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IQE006NE2LM5ATMA1

IQE006NE2LM5ATMA1

MOSFET N-CH 25V 41A/298A 8TSON

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IQE006NE2LM5ATMA1

IQE006NE2LM5ATMA1

Image is for reference, please contact us to get the real picture

Part No :

IQE006NE2LM5ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 25V 41A/298A 8TSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14218 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2024
Type Description
Series:*
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:41A (Ta), 298A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:650mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:82.1 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:5453 pF @ 12 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 89W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Supplier Device Package:PG-TSON-8-4
Package / Case:8-PowerTDFN
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