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IQE006NE2LM5ATMA1

IQE006NE2LM5ATMA1

MOSFET N-CH 25V 41A/298A 8TSON

KMPC8347EZQAGDB

KMPC8347EZQAGDB

IC MPU MPC83XX 400MHZ 620BGA

IQE006NE2LM5ATMA1

IQE006NE2LM5ATMA1

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Part No :

IQE006NE2LM5ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 25V 41A/298A 8TSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14218 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 22 - Sep 26 2024
Type Description
Series:*
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:41A (Ta), 298A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:650mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:82.1 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:5453 pF @ 12 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 89W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Supplier Device Package:PG-TSON-8-4
Package / Case:8-PowerTDFN
IQE006NE2LM5ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IQE006NE2LM5ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IQE006NE2LM5ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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