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IAUT200N08S5N023ATMA1

IAUT200N08S5N023ATMA1

MOSFET N-CH 80V 200A 8HSOF

IAUT200N08S5N023ATMA1

IAUT200N08S5N023ATMA1

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Part No :

IAUT200N08S5N023ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 80V 200A 8HSOF
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11616 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 23 - Feb 27 2025
Type Description
Series:OptiMOS™-5
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:200A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.8V @ 130µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7670 pF @ 40 V
FET Feature:-
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HSOF-8-1
Package / Case:8-PowerSFN
IAUT200N08S5N023ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IAUT200N08S5N023ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IAUT200N08S5N023ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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