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FQA8N100C

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MOSFET N-CH 1000V 8A TO3PN

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FQA8N100C

FQA8N100C

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Part No :

FQA8N100C

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 1000V 8A TO3PN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10242 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
FQA8N100C PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.45Ohm @ 4A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3220 pF @ 25 V
FET Feature:-
Power Dissipation (Max):225W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PN
Package / Case:TO-3P-3, SC-65-3
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