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IPW60R180P7XKSA1

IPW60R180P7XKSA1

MOSFET N-CH 650V 18A TO247-3

IPW60R180P7XKSA1

IPW60R180P7XKSA1

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Part No :

IPW60R180P7XKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 18A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
955195 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 29 - Jan 02 2024
PDF
IPW60R180P7XKSA1 PDF
Type Description
Series:CoolMOS™ P7
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id:4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1081 pF @ 400 V
FET Feature:-
Power Dissipation (Max):72W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
IPW60R180P7XKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPW60R180P7XKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPW60R180P7XKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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