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IXTA3N100D2HV

IXTA3N100D2HV

MOSFET N-CH 1000V 3A TO263HV

IXTA3N100D2HV

IXTA3N100D2HV

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Part No :

IXTA3N100D2HV

Manufacturer
Wickmann / Littelfuse
Description
MOSFET N-CH 1000V 3A TO263HV
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10600 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 29 - Jan 02 2024
PDF
IXTA3N100D2HV PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:3A (Tj)
Drive Voltage (Max Rds On, Min Rds On):0V
Rds On (Max) @ Id, Vgs:6Ohm @ 1.5A, 0V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:37.5 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1020 pF @ 25 V
FET Feature:Depletion Mode
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263HV
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTA3N100D2HV is available at GangBo-ic.com, Please review product page below for detailed information, including IXTA3N100D2HV price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IXTA3N100D2HV to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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