MOSFET N-CH 30V 18A PPAK SO-8
Type | Description |
---|---|
Series: | TrenchFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 9mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 28 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1040 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 3.3W (Ta), 14.7W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerPAK® SO-8 |
Package / Case: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPI60R099CPXKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 31A TO262-3 |
|
AOD4126Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 7.5A/43A TO252 |
|
CSD16415Q5Texas Instruments |
MOSFET N-CH 25V 100A 8VSON |
|
SI4890DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 11A 8-SOIC |
|
NP70N04MUG-S18-AYRochester Electronics |
MOSFET N-CH 40V 70A TO220 |
|
AOV15S60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 520MA/12A 4DFN |
|
APT6021BLLGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 29A TO247 |
|
IXTU01N100Wickmann / Littelfuse |
MOSFET N-CH 1000V 100MA TO251 |
|
NTMS4873NFR2GRochester Electronics |
MOSFET N-CH 30V 7.1A 8SOIC |
|
FDPF035N06B_F152Rochester Electronics |
MOSFET N-CH 60V 88A TO220F-3 |
|
PSMN010-25YLC,115Rochester Electronics |
MOSFET N-CH 25V 39A LFPAK56 |
|
IPI80N06S4L07AKSA2Rochester Electronics |
MOSFET N-CH 60V 80A TO262-3-1 |
|
TK100E10N1,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 100A TO220 |