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IPI80N06S4L07AKSA2

IPI80N06S4L07AKSA2

MOSFET N-CH 60V 80A TO262-3-1

IPI80N06S4L07AKSA2

IPI80N06S4L07AKSA2

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Part No :

IPI80N06S4L07AKSA2

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 60V 80A TO262-3-1
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16827 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 31 - Jan 04 2024
PDF
IPI80N06S4L07AKSA2 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:2.2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs:72 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:5.68 pF @ 25 V
FET Feature:-
Power Dissipation (Max):79W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3-1
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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