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IPB65R190CFDAATMA1

IPB65R190CFDAATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPB65R190CFDAATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 17.5A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
074907 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 25 - Mar 01 2025
PDF
IPB65R190CFDAATMA1 PDF
Type Description
Series:Automotive, AEC-Q101, CoolMOS™
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id:4.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:68 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1850 pF @ 100 V
FET Feature:-
Power Dissipation (Max):151W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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