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IRFR1018EPBF

IRFR1018EPBF

MOSFET N-CH 60V 56A DPAK

IRFR1018EPBF

IRFR1018EPBF

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Part No :

IRFR1018EPBF

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 60V 56A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14403 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
IRFR1018EPBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:56A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:8.4mOhm @ 47A, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:69 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2290 pF @ 50 V
FET Feature:-
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-PAK (TO-252AA)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR1018EPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFR1018EPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFR1018EPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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