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FQPF10N20C

FQPF10N20C

POWER FIELD-EFFECT TRANSISTOR, 9

SC00P-20-8P

SC00P-20-8P

CONN RCPT MALE 6P SILV SLDR CUP

FQPF10N20C

FQPF10N20C

Image is for reference, please contact us to get the real picture

Part No :

FQPF10N20C

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 9
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12713 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
FQPF10N20C PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:360mOhm @ 4.75A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:510 pF @ 25 V
FET Feature:-
Power Dissipation (Max):38W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Package / Case:TO-220-3 Full Pack
FQPF10N20C is available at GangBo-ic.com, Please review product page below for detailed information, including FQPF10N20C price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQPF10N20C to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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