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FQU10N20LTU

FQU10N20LTU

MOSFET N-CH 200V 7.6A IPAK

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FQU10N20LTU

FQU10N20LTU

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Part No :

FQU10N20LTU

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 200V 7.6A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13190 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
FQU10N20LTU PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:360mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:830 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 51W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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