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MHQ1005P27NJT000

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FIXED IND 27NH 230MA 1.3 OHM SMD

FDMS8050ET30

FDMS8050ET30

MOSFET N-CH 30V 55A/423A POWER56

FDMS8050ET30

FDMS8050ET30

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Part No :

FDMS8050ET30

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 30V 55A/423A POWER56
Catalog
Transistors - FETs, MOSFETs - Single
Availability
30009000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
FDMS8050ET30 PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:55A (Ta), 423A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:0.65mOhm @ 55A, 10V
Vgs(th) (Max) @ Id:3V @ 750µA
Gate Charge (Qg) (Max) @ Vgs:285 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:22610 pF @ 15 V
FET Feature:-
Power Dissipation (Max):3.3W (Ta), 180W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power56
Package / Case:8-PowerTDFN
FDMS8050ET30 is available at GangBo-ic.com, Please review product page below for detailed information, including FDMS8050ET30 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDMS8050ET30 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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