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BSZ130N03LSGATMA1

BSZ130N03LSGATMA1

MOSFET N-CH 30V 10A/35A 8TSDSON

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BSZ130N03LSGATMA1

BSZ130N03LSGATMA1

Image is for reference, please contact us to get the real picture

Part No :

BSZ130N03LSGATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 30V 10A/35A 8TSDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
19820 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
BSZ130N03LSGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:13mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:970 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8
Package / Case:8-PowerTDFN
BSZ130N03LSGATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSZ130N03LSGATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSZ130N03LSGATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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