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RM130N200HD

RM130N200HD

MOSFET N-CH 200V 132A TO263-2

RM130N200HD

RM130N200HD

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Part No :

RM130N200HD

Manufacturer
Rectron USA
Description
MOSFET N-CH 200V 132A TO263-2
Catalog
Transistors - FETs, MOSFETs - Single
Availability
484548 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:132A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4970 pF @ 100 V
FET Feature:-
Power Dissipation (Max):429W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RM130N200HD is available at GangBo-ic.com, Please review product page below for detailed information, including RM130N200HD price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RM130N200HD to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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