MOSFET N-CH 60V 40A TSDSON-8-33
DIODE SCHOTTKY 50V SOD323
CONN D-SUB HD RCPT 78P VERT SLDR
Type | Description |
---|---|
Series: | OptiMOS™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 5mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 3.4V @ 29µA |
Gate Charge (Qg) (Max) @ Vgs: | 30.5 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2.2 nF @ 30 V |
FET Feature: | - |
Power Dissipation (Max): | 71W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TSDSON-8-33 |
Package / Case: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRF840LCPBFVishay / Siliconix |
MOSFET N-CH 500V 8A TO220AB |
|
IPP100N08S2L07AKSA1IR (Infineon Technologies) |
MOSFET N-CH 75V 100A TO220-3 |
|
STD10N60DM2STMicroelectronics |
MOSFET N-CH 650V 8A DPAK |
|
IPA057N08N3GRochester Electronics |
IPA057N08 - 12V-300V N-CHANNEL P |
|
BSS223PWL6327Rochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
NVD4806NT4GRochester Electronics |
N-CHANNEL, MOSFET |
|
FQPF5N80Rochester Electronics |
MOSFET N-CH 800V 2.8A TO220F |
|
SIS478DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 12A PPAK1212-8 |
|
PMN30ENEAXNexperia |
MOSFET N-CH 40V 5.4A 6TSOP |
|
NTD4854N-1GRochester Electronics |
MOSFET N-CH 25V 15.7A/128A IPAK |
|
RUM002N05T2LROHM Semiconductor |
MOSFET N-CH 50V 200MA VMT3 |
|
2N7002W-TPMicro Commercial Components (MCC) |
MOSFET N-CH 60V 115MA SOT-323 |
|
NDS8425Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |