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SI4842BDY-T1-GE3

SI4842BDY-T1-GE3

MOSFET N-CH 30V 28A 8SO

VI-RU012-EYYW

VI-RU012-EYYW

VI-RU012-EYYW

SI4842BDY-T1-GE3

SI4842BDY-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SI4842BDY-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 30V 28A 8SO
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12525 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 05 - Nov 09 2025
PDF
SI4842BDY-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3650 pF @ 15 V
FET Feature:-
Power Dissipation (Max):3W (Ta), 6.25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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